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Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

✍ Scribed by Yunin, P. A.; Drozdov, Yu. N.; Drozdov, M. N.; Korolev, S. A.; Lobanov, D. N.

Book ID: 121592333
Publisher: Springer
Year: 2013
Tongue: English
Weight: 262 KB
Volume: 47
Category: Article
ISSN: 1063-7826
DOI: 10.1134/S1063782613120221

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