✦ LIBER ✦

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

✍ Scribed by F. Domengie; J. L. Regolini; D. Bauza

Publisher: Springer US
Year: 2010
Tongue: English
Weight: 421 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1212-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deep levels in homoepitaxial boron-doped

Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies

✍ Muret, Pierre ;Pernot, Julien ;Teraji, Tokuyuki ;Ito, Toshimichi 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 341 KB

## Abstract Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron‐doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristi

Deep Traps in AlGaN/GaN Heterostructure

Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location

✍ Z.-Q. Fang; B. Claflin; D.C. Look 📂 Article 📅 2011 🏛 Springer US 🌐 English ⚖ 588 KB

A study of grown-in impurities in silico

A study of grown-in impurities in silicon by deep-level transient spectroscopy : A. Rohatgi, J. R. Davis, R. H. Hopkins and P. G. Mcmullin. Solid-St. Electron.26 (11), 1039 (1983)

📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 132 KB