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Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy

✍ Scribed by K Asokan; S.K Srivastava; D Kabiraj; S Mookerjee; D.K Avasthi; J.C Jan; J.W Chiou; W.F Pong; L.C Ting; F.Z Chien

Book ID
114165921
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
202 KB
Volume
193
Category
Article
ISSN
0168-583X

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## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int