Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si

✍ Scribed by Lee, P. F.; Dai, J. Y.; Wong, K. H.; Chan, H. L. W.; Choy, C. L.

• Book ID: 120059322
• Publisher: American Institute of Physics
• Year: 2003
• Tongue: English
• Weight: 406 KB
• Volume: 82
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1566796