Study of Gate Oxide/Channel Interface Properties of SON MOSFETs by Random Telegraph Signal and Low Frequency Noise

✍ Scribed by Trabelsi, M'hamed; Militaru, Liviu; Sghaier, Nabil; Savio, Andrea; Monfray, Stephane; Souifi, Abdelkader

• Book ID: 121855765
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 593 KB
• Volume: 10
• Category: Article
• ISSN: 1536-125X
• DOI: 10.1109/TNANO.2010.2043112