Laser-enhanced oxidation of gallium arsenide surfaces has been investigated. The oxidation was performed either in air or in pure water at room temperature. Light at ultraviolet wavelengths was found to enhance the oxidation rate much more strongly than at visible wavelengths. The oxidation in air l
Study of gallium arsenide surfaces
โ Scribed by M.H. Pilkuhn
- Publisher
- Elsevier Science
- Year
- 1964
- Tongue
- English
- Weight
- 508 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0022-3697
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Electronic structures and stabilities of Ga,As, clusters (n= l-3) are explored by means of accurate quantum-chemical calculations using ab initio effective core potentials (ECP). Our results on GaAs and Ga2As2 are in good agreement with the conclusions from previous studies on these systems. We find
Chemical shifts of GaAs and InGaAs were observed by solid-state h&h-resolution NMR. The spectrum of GaAs appeared as a single peak but that of InGaAs consisted of an intense narrow peak and a weak broad one which appeared at =10-U ppm slightly higher field from the former.
Changes in the structural stability of lysozyme, upon adsorption to silica and gallium arsenide (GaAs) surfaces, are studied using a combination of hydrogen/deuterium exchange and matrix-assisted laser desorption/ionization mass spectrometry. This relatively new method offers a tool for directly mon