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Study of excitons in an arbitrarily shaped GaAs/Al0.3Ga0.7As single quantum well in the presence of static transverse electric field

โœ Scribed by Hong, Songcheol; Singh, Jasprit


Book ID
121015193
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
1003 KB
Volume
61
Category
Article
ISSN
0021-8979

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Spatially Indirect Excitons in GaAs/Al0.
โœ Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E. ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 183 KB ๐Ÿ‘ 1 views

We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect