Spatially Indirect Excitons in GaAs/Al0.
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Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E.
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Article
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2000
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John Wiley and Sons
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English
โ 183 KB
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We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect