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Study of electronic states located at the SiSiO2 interface and within the oxide volume of VLSI MOS capacitors using capacitance and conductance measurements

✍ Scribed by Toutah, H. ;Pananakakis, G.

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
388 KB
Volume
87
Category
Article
ISSN
0031-8965

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