Study of bandgap narrowing in the space-charge region of heavily doped silicon MOS capacitors

✍ Scribed by H.C. Chen; Sheng S. Li; K.W. Teng

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 523 KB
• Volume: 32
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(89)90120-2