Study of bandgap narrowing in the space-charge region of heavily doped silicon MOS capacitors : H. C. Chen, Sheng S. Li and K. W. Teng. Solid-St. Electron. 32(5), 339 (1989)

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 260 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(90)90526-s