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Study of angular factors in sputter-deposition using the ion beam method

โœ Scribed by T. Motohiro; Y. Taga; K. Nakajima

Publisher
Elsevier Science
Year
1982
Weight
48 KB
Volume
118
Category
Article
ISSN
0167-2584

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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese