## Abstract Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)βdoped GaSb substrate were fabricated, with the purpose of obtaining GaSb pβn homoβjunctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and postβgrow
β¦ LIBER β¦
Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods
β Scribed by S von Aichberger; R Schieck; M Kunst
- Book ID
- 108472163
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 186 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0927-0248
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