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Studies on the growth mechanism of InGaAs during current controlled liquid phase epitaxy

โœ Scribed by R.S. Qhalid Fareed; R. Dhanasekaran


Book ID
114194312
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
521 KB
Volume
51
Category
Article
ISSN
0254-0584

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โœ R. Jothilingam; R. Dhanasekaran ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 424 KB

A theoretical analysis of the nucleation kinetics of liquid phase epitaxial {LPE} growth of lnGaAs on GaAs was conducted using classical heterogeneous nucleation theory incorporating the lattice mismatch between the alloy and the substratc. Non-equilibrium contact between the inGaAs ternary saturate