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Structures of dislocations in GaAs and their modification by impurities

✍ Scribed by Sitch, P.; Jones, R.; Öberg, S.; Heggie, M.

Book ID
115446486
Publisher
The American Physical Society
Year
1994
Tongue
English
Weight
370 KB
Volume
50
Category
Article
ISSN
1098-0121

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Structural and electrical properties of
Structural and electrical properties of metal impurities at dislocations in silicon
✍ Seibt, M. ;Kveder, V. ;Schröter, W. ;Voß, O. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 363 KB

## Abstract The electrical properties of silicon materials containing dislocations are strongly affected by deep levels at or close to the dislocation core. Such deep levels are frequently thought to be due to metal impurities that are chemically bound to the dislocation core, segregated in the lon