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Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

✍ Scribed by P. Rudolph; Ch. Frank-Rotsch; U. Juda; F.-M. Kiessling


Book ID
108214355
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
430 KB
Volume
400-401
Category
Article
ISSN
0921-5093

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