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Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy

✍ Scribed by H Tang; J.B Webb; S Moisa; J.A Bardwell; S Rolfe


Book ID
108341699
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
191 KB
Volume
244
Category
Article
ISSN
0022-0248

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Epitaxial Ti2AlN(0 0 0 1)
✍ P.O.Γ…. Persson; S. Kodambaka; I. Petrov; L. Hultman πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 836 KB

Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N 2 discharge was used to deposit epitaxial single-crystal MAX phase Ti 2 AlN(0 0 0 1) thin films, without seed layers, onto Al 2 O 3 (0 0 0 1) substrates kept at 1050 Β°C. By varying the N 2 partial pressure a narrow process w