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Structure and Ultraviolet Electroluminescence of Nanocomposite/ -GaN Heterostructure Light-Emitting Diodes

✍ Scribed by Miin-Jang Chen; Ying-Tsang Shih; Mong-Kai Wu; Hsing-Chao Chen; Hung-Ling Tsai; Wei-Chih Li; Jer-Ren Yang; Hon Kuan; Shiojiri, M.

Book ID: 114620080
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 724 KB
Volume: 57
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2053375

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati