Structure and Reactivity of the System Si/SO2/Fe
โ Scribed by Li, X. D. ;Zeng, L. Z.
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 228 KB
- Volume
- 121
- Category
- Article
- ISSN
- 0031-8965
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Interface studies in metal/semiconductor systems are important due to their potential technological application in microelectronics. A total of 80 nm Fe film was deposited on Si(111) substrate using electron beam evaporation technique at a vacuum of 2 ร 10 ร7 Torr. The samples were annealed at tempe
## Abstract The rate constants for the reaction of 2,6โbis(trifluoromethanesulfonyl)โ4โnitroanisole with some substituted anilines have been measured by spectrophotometric methods in methanol at various temperatures. The data are consistent with the S~N~Ar mechanism. The effect of substituents on t