Structural, magnetic and electrical properties of Fe/Si system

✍ Scribed by Chhagan Lal; Renu Dhunna; I.P. Jain

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 274 KB
• Volume: 11
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2008.04.004

✦ Synopsis

Interface studies in metal/semiconductor systems are important due to their potential technological application in microelectronics. A total of 80 nm Fe film was deposited on Si(111) substrate using electron beam evaporation technique at a vacuum of 2 Â 10 À7 Torr. The samples were annealed at temperatures 500 and 600 1C for 1 h in 3 Â 10 À5 Torr for the formation of silicide phases. GIXRD results show a stable disilicides FeSi 2 formation at the interface at annealing temperature 600 1C. The coercivity determined from MOKE hysteresis curves for as-deposited and annealed samples are 14.91, 29.82 and 31.01 Oe. The Schottky barrier height, as estimated by the current-voltage measurement is 0.59, 0.54 and 0.49 eV for pristine and annealed samples at 500 and 600 1C, respectively, and concludes that the barrier height values as a function of the heat of formation of the silicides.