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Structure and reactivity of the system Si/Sio2/Pd: A combined XPS, UPS and HREELS study

✍ Scribed by B. Schleich; D. Schmeisser; W. Göpel

Book ID
119482172
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
761 KB
Volume
191
Category
Article
ISSN
0039-6028

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XPS analysis and valence band structure
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✍ Zatsepin, D. A. ;Mack, P. ;Wright, A. E. ;Schmidt, B. ;Fitting, H.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 344 KB

## Abstract A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO~2~/p‐Si heterostructure containing a thin oxide layer of __d__= 20 nm thickness and implanted by Si^+^ ions. With an implantation energy of 12 keV the maximum density of the implanted S