Ion beam characterization of rf-sputter
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N. Matsunami; S. Venkatachalam; M. Tazawa; H. Kakiuchida; M. Sataka
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Article
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2008
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Elsevier Science
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English
⚖ 387 KB
Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The