Structure and optoelectronic properties of Si/O superlattice

✍ Scribed by K. Dovidenko; J.C. Lofgren; F. de Freitas; Y.J. Seo; R. Tsu

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 956 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00631-8

✦ Synopsis

We have carried out structural study of the Si/O semiconductor atomic superlattices (SAS) with up to 18 Si/O layers fabricated by molecular beam epitaxy and in situ oxygen exposure on both Sb-doped and undoped Si bu er layers, and correlated the results with our photoluminescence, electroluminescence (EL) and I -V data. The Si/O SAS is a new type of superlattice, where monolayers of oxygen are sandwiched between the Si layers. High-resolution cross-sectional transmission electron microscopy (TEM) study has conÿrmed the presence of the superlattice and shown epitaxy in the Si/O superlattices. The high structural quality of the layers grown on the undoped Si bu er layers with low density of stacking faults-less than 10 7 =cm 2 -was established by TEM. Although structure perfection is very important allowing this new class of superlattices to be extended to other systems, it is important to point out that a 9-period SAS-based EL device with emission of light in green has been life-tested with stable output for over 1 year of continuous operation. The Si/O superlattice also serves as an epitaxially grown insulating layer as possible replacement of silicon-on-insulator. Together with the tailor-made e ective band gap, this epitaxially grown superlattice may serve as future silicon-based three-dimensional integrated circuits.