Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon

✍ Scribed by Markevich, V. P. ;Peaker, A. R. ;Hamilton, B. ;Lastovskii, S. B. ;Murin, L. I. ;Coutinho, J. ;Torres, V. J. B. ;Dobaczewski, L. ;Svensson, B. G.

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 232 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201000265