Zr-Al-O dielectric films have been deposited on Pt-coated silicon substrates and directly on n-type Si substrates, respectively, by pulsed laser deposition technique using a (ZrO ) (Al O ) ceramic target. The 2 0.5 2 3 0.5 Zr-Al-O films deposited in 20 Pa oxygen ambient at 300 8C substrate temperat
Structure and electrochemical hydrogen storage properties of Pd/Mg1−xAlx/Pd thin films prepared by pulsed laser deposition
✍ Scribed by S. Bouhtiyya; L. Roué
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 506 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0022-2461
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