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Structure and electrical transport in microcrystalline composite Si-NiSi2 thin films

✍ Scribed by O. Schoenfeld; X. Zhao; T. Hempel; Y. Aoyagi; T. Sugano

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
761 KB
Volume
56
Category
Article
ISSN
0022-3697

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Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In