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Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer

โœ Scribed by He, Jun; Wu, Yuan; Wang, Kang L


Book ID
121390856
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
407 KB
Volume
21
Category
Article
ISSN
0957-4484

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Abnormal temperature dependence of photo
โœ Z.Y. Zhang; C.L. Yang; Y.Q. Wei; X.L. Ye; P. Jin; Ch.M. Li; X.Q. Meng; B. Xu; Z. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 289 KB

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i