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Structural Transformations and Defect Production in Ion Implanted Silicon: A Molecular Dynamics Simulation Study

✍ Scribed by Diaz de la Rubia, T.; Gilmer, G. H.

Book ID
121404118
Publisher
The American Physical Society
Year
1995
Tongue
English
Weight
666 KB
Volume
74
Category
Article
ISSN
0031-9007

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πŸ“œ SIMILAR VOLUMES

Defect production and annealing in ion i
Defect production and annealing in ion implanted silicon carbide
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron