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Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy

✍ Scribed by R.S Qhalid Fareed; S Juodkazis; S.H Chung; T Sugahara; S Sakai

Book ID
114194812
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
545 KB
Volume
64
Category
Article
ISSN
0254-0584

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## Abstract A detailed photoluminescence (PL), time‐resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors