Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition

✍ Scribed by Se-Yun Kim; Sang-Yun Sung; Kwang-Min Jo; Joon-Hyung Lee; Jeong-Joo Kim; S.J. Pearton; D.P. Norton; Young-Woo Heo

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 891 KB
• Volume: 326
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.01.041

✦ Synopsis

We report an investigation of the structural properties of CuCr 0.95 Mg 0.05 O 2 films on c-plane sapphire substrates using pulsed laser deposition. The thin films were grown at different temperatures of 500, 600, and 700 1C with an oxygen partial pressure of 10 mTorr. c-axis oriented epitaxial CuCr 0.95 Mg 0.05 O 2 thin films on c-plane sapphire substrates with an in-plan 301 rotation were obtained. The sixfold rotational symmetry in the pole figures from the (0 1 2) plane indicates that there are two different types of crystal grains in which the a-axes rotate by 601 with respect to each other around the c-axis. The reason for the 301 rotation is assumed to be the presence of the $ 10% mismatch of oxygen distance between the c-plane sapphire substrate and the CuCr 0.95 Mg 0.05 O 2 on the c-plane. The epitaxial crystallographic relationship between CuCr 0.95 Mg 0.05 O 2 and Al 2 O 3 was (0 0 0 6)CuCrO 2 //(0 0 0 3)Al 2 O 3 and [1 0 À 1 0]CuCrO 2 //[1 1 À 2 0]Al 2 O 3 . The presence of twins in the films and the surface morphology were investigated using transmission electron microscopy and scanning electron microscopy, respectively.