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Structural properties of hydrogenated silicon nanocrystals and nanoclusters

โœ Scribed by Yu, D. K.; Zhang, R. Q.; Lee, S. T.

Book ID
120248771
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
686 KB
Volume
92
Category
Article
ISSN
0021-8979

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Electrical properties of bistable shallow donors in monocrystalline silicon which are introduced by proton implantation followed by annealing at 300-450 C have been studied by Hall effect and conductivity measurements. The temperature dependences of equilibrium and non-equilibrium carrier concentrat