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Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD

✍ Scribed by N. Barreau; S. Marsillac; D. Albertini; J.C. Bernede


Book ID
114085357
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
293 KB
Volume
403-404
Category
Article
ISSN
0040-6090

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Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In