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Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method

✍ Scribed by M. Kundakci; A. Ateş; A. Astam; M. Yildirim

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
845 KB
Volume
40
Category
Article
ISSN
1386-9477

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The structural, electrical and optical properties of AgGa(Se 0.5 S 0.5 ) 2 thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 °C. X-ray diffraction (XRD) analysis showed that the structural transformation