The structures of several Ga 2 O 3 +In 2 O 3 +SnO 2 phases were investigated using high-resolution electron microscopy, X-ray di4raction, and Rietveld analysis of time-of-6ight neutron diffraction data. The phases, expressed as Ga 4؊4x In 4x Sn n؊4 O 2n؊2 (n ؍ 6 and 7+17, odd), are intergrowths be
Structural models for intergrowth structures in the phase system Al2O3–TiO2
✍ Scribed by Stefan Hoffmann; Stefan T. Norberg; Masahiro Yoshimura
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 528 KB
- Volume
- 178
- Category
- Article
- ISSN
- 0022-4596
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✦ Synopsis
The phase system Al 2 O 3 -TiO 2 was investigated in the compositional range from 48:52 to 62:38 mol% Al 2 O 3 :TiO 2 . The samples were prepared by melting the binary oxides in an arc-imaging furnace and the obtained samples were examined by powder X-ray diffraction. The recorded powder patterns could be interpreted in terms of intergrowth structures consisting of two basic building blocks, which were deduced from the known crystal structures of b-Al 2 TiO 5 and Al 6 Ti 2 O 13 . The structure of a new ordered compound with the formula Al 16 Ti 5 O 34 is proposed. The thermal stability was estimated from DTA and tempering experiments and showed that all prepared samples decompose at temperatures around 800 1C into the binary oxides corundum and titania.
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