Tunneled Intergrowth Structures in the Ga2O3–In2O3–SnO2 System

✍ Scribed by D.D. Edwards; T.O. Mason; W. Sinkler; L.D. Marks; K.R. Poeppelmeier; Z. Hu; J.D. Jorgensen

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 879 KB
• Volume: 150
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1999.8594

✦ Synopsis

The structures of several Ga 2 O 3 +In 2 O 3 +SnO 2 phases were investigated using high-resolution electron microscopy, X-ray di4raction, and Rietveld analysis of time-of-6ight neutron diffraction data. The phases, expressed as Ga 4؊4x In 4x Sn n؊4 O 2n؊2 (n ‫؍‬ 6 and 7+17, odd), are intergrowths between the -gallia structure of (Ga, In) 2 O 3 and the rutile structure of SnO 2 . Samples prepared with n59 crystallize in C2/m and are isostructural with intergrowths in the Ga 2 O 3 +TiO 2 system. Samples prepared with n ‫؍‬ 6 and n ‫؍‬ 7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The di4erence between the two series is described in terms of di4erent crystallographic shear plane operations (CSP) on the parent rutile structure.