๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Structural, dielectric and electromechanical study of Hf-substituted BaTiO3thin films fabricated by CSD

โœ Scribed by S. Halder; P. Gerber; T. Schneller; R. Waser

Publisher
Springer
Year
2006
Tongue
English
Weight
812 KB
Volume
83
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Frequency and temperature-dependent diel
Frequency and temperature-dependent dielectric properties of BaTiO3 thin film capacitors studied by complex impedance spectroscopy
โœ Y.K. Vayunandana Reddy; D. Mergel ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 410 KB

Thin film capacitors with BaTiO 3 as dielectric and RuO 2 as electrode material have been prepared by rf-magnetron sputtering at temperatures up to 750 1C and under various oxygen partial pressures. They have been analyzed by complex impedance spectroscopy in the temperature range 20-200 1C. At abou

Structure and dielectric properties of B
Structure and dielectric properties of Bi-doped Ba0.6Sr0.4TiO3 thin films fabricated by solโ€“gel method
โœ Kyoung-Tae Kim; Chang-Il Kim ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 382 KB

An alkoxide-based sol-gel method was used to fabricate Ba Sr TiO thin films doped by Bi from 5 to 20 0.6 0.4 3 mol% on a Pt / Ti / SiO / Si substrate. The structural and dielectric properties of BST thin films were investigated 2 as a function of Bi dopant concentration. The dielectric properties of