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Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

✍ Scribed by Xun Cao; Xiaomin Li; Weidong Yu; Yiwen Zhang; Rui Yang; Xinjun Liu; Jingfang Kong; Wenzhong Shen

Book ID
116605332
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
713 KB
Volume
486
Category
Article
ISSN
0925-8388

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Thin films of TiO 2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO 2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO 2 thin films.