Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
✦ LIBER ✦
Structural and optical properties of porous silicon prepared from ap+-epitaxial layer onn-Si(111)
✍ Scribed by A. S. Len’shin, V. M. Kashkarov, D. A. Minakov, B. L. Agapov…
- Book ID
- 120810188
- Publisher
- Springer
- Year
- 2013
- Tongue
- English
- Weight
- 969 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1063-7842
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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi