𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structural and optical properties of porous silicon prepared from ap+-epitaxial layer onn-Si(111)

✍ Scribed by A. S. Len’shin, V. M. Kashkarov, D. A. Minakov, B. L. Agapov…


Book ID
120810188
Publisher
Springer
Year
2013
Tongue
English
Weight
969 KB
Volume
58
Category
Article
ISSN
1063-7842

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Structural, optical and electrical chara
✍ M. Balarin; O. Gamulin; M. Ivanda; M. Kosović; D. Ristić; M. Ristić; S. Musić; K 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 763 KB

Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt

Structure and optical properties of poro
✍ M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K. 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 743 KB

Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi