Structural and optical properties of electrodeposited Bi2S3, Sb2S3 and As2S3 thin films
β Scribed by N.S. Yesugade; C.D. Lokhande; C.H. Bhosale
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 438 KB
- Volume
- 263
- Category
- Article
- ISSN
- 0040-6090
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Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In
Sb 2 S 3 thin films are obtained by evaporating of Sb 2 S 3 powder onto glass substrates maintained at room temperature under pressure of 2Γ10 -5 torr. The composition of the thin films was determined by energy dispersive analysis of X-ray (EDAX). The effect of thermal annealing in vacuum on the str