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Structural and optical characteristics of porous GaN generated by electroless chemical etching

โœ Scribed by F.K. Yam; Z. Hassan

Book ID
113792633
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
729 KB
Volume
63
Category
Article
ISSN
0167-577X

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## Abstract Samples containing silicon nanowires (Siโ€NWs) and highly porous structures (Pโ€Si) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488โ€‰nm and a p