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Structural and optical analysis of epitaxial GaN on sapphire

✍ Scribed by Strauß, U; Tews, H; Riechert, H; Averbeck, R; Schienle, M; Jobst, B; Volm, D; Streibl, T; Meyer, B K; Rühle, W W


Book ID
127254943
Publisher
Institute of Physics
Year
1997
Tongue
English
Weight
165 KB
Volume
12
Category
Article
ISSN
0268-1242

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Infrared reflectance analysis of GaN epi
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Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes