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Structural and morphological peculiarities of the epitaxial layers and monocrystals of silicon carbide highly doped by nitrogen

✍ Scribed by Lilov, S. K. ;Tairov, Yu. M. ;Tsvetkov, V. F. ;Chernov, M. A.


Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
553 KB
Volume
37
Category
Article
ISSN
0031-8965

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Epitaxial growth of silicon carbide laye
✍ Dr. E. N. Mokhov; Dr. I. L. Shulpina; A. S. Tregubova; Dr. Yu. A. Vodakov 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 705 KB

## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s