Epitaxial growth of silicon carbide laye
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Dr. E. N. Mokhov; Dr. I. L. Shulpina; A. S. Tregubova; Dr. Yu. A. Vodakov
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Article
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1981
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John Wiley and Sons
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English
⚖ 705 KB
## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s