Structural and Magnetic Properties of the Ternary Manganese Compound Semiconductors MnAl2Te4, MnIn2Te4, and MnIn2Se4
✍ Scribed by Döll, G. ;Anghel, A. ;Baumann, J. R. ;Bucher, E. ;Ramirez, A. P. ;Range, K.-J.
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 372 KB
- Volume
- 126
- Category
- Article
- ISSN
- 0031-8965
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📜 SIMILAR VOLUMES
In the quasibinary system \(\mathrm{MnIn}_{2} \mathrm{~S}_{4}-\mathrm{MnIn}_{2} \mathrm{Se}_{4}\) a series of solid solutions of general formula \(\mathrm{MnIn}_{2} \mathrm{~S}_{x} \mathrm{Se}_{4-x}\) exists for \(2.4 \geq x \geq 0.2\) with the layered \(\mathrm{MgAl}_{2} \mathrm{~S}_{4}\) structure
The compounds [NEt,],[Ni$e,(Se,),(Se,)] axNEt& (x= 0, 1) and [NEt&[Ni.,Te4(Te2)2(Te3)41 have been prepared from the reaction in DMF of Ni(S2COEt)2 with L&Se and Se or Li,Te and Te, respectively. These compounds result from spontaneous assembly reactions in which Nix1 centers are oxidized to Niw with