Materials with Layered Structures. VIII. Subsolidus Phase Diagram of the System MnIn2S4-MnIn2Se4 and Characterization of the Layered Materials MnIn2SxSe4-x by Electrical Measurements and Diffuse Reflectance Spectroscopy

✍ Scribed by H. Haeuseler; W. Cordes; D. Reinen; U. Kesper

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 188 KB
• Volume: 106
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1993.1310

✦ Synopsis

In the quasibinary system (\mathrm{MnIn}{2} \mathrm{~S}{4}-\mathrm{MnIn}{2} \mathrm{Se}{4}) a series of solid solutions of general formula (\mathrm{MnIn}{2} \mathrm{~S}{x} \mathrm{Se}{4-x}) exists for (2.4 \geq x \geq 0.2) with the layered (\mathrm{MgAl}{2} \mathrm{~S}{4}) structure. The samples have been characterized by X-ray powder diffraction and investigated by electrical measurements and diffuse reflectance spectroscopy. The compounds are semiconductors with optical band gaps varying between 1.6 and (1.2 \mathrm{eV}) depending on (x). From Arrhenius plots of the conductivity data at least two different activation energies (E{\mathrm{a}}) can be obtained: in the temperature interval from 50 to (200^{\circ} \mathrm{C}) we find (E_{\mathrm{a}}=0.5 \mathrm{eV}), independent of the composition of the samples, while in the high temperature region from 200 to (400^{\circ} \mathrm{C}, E_{\mathrm{a}}) varies with (x) from 1.35 to (0.56 \mathrm{eV}). 1993 Acadernic Press, Inc.