## Abstract The structural and optical properties of porous silicon (PS) layers prepared by Vapour‐Etching (VE) of moderately and heavily boron‐doped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected cluster‐like structures. Opti
✦ LIBER ✦
Structural and luminescence properties of vapour-etched porous silicon and related compounds
✍ Scribed by S. Aouida; M. Saadoun; K. Ben Saad; B. Bessaïs
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 149 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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