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Structural and light-emission modification in chemically-etched porous silicon

✍ Scribed by Navarro-Urrios, D. ;Pérez-Padrón, C. ;Lorenzo, E. ;Capuj, N. E. ;Gaburro, Z. ;Oton, C. J. ;Pavesi, L.

Book ID
105363147
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
202 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

After electrochemical etching, we have made a study of the effects generated on p^+^‐type porous silicon layers when they are left in presence of the electrolyte for different post‐etching times. Using an interferometric technique, we have monitored the change of its porosity during the post‐etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post‐etching times. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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