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Structural and electronic transformations at the Cs/GaAs interface

โœ Scribed by Tereshchenko, O.E.; Voronin, V.S.; Scheibler, H.E.; Alperovich, V.L.; Terekhov, A.S.


Book ID
121224020
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
220 KB
Volume
507-510
Category
Article
ISSN
0039-6028

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Classified abstracts 3408-3417 edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like Al for the Au contact. To position the Fermi level closer to a valence-band edge, however, there are no further possibilities among the elemental metals, since A