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Electronic structure at the PTCDA/GaAs and NTCDA/GaAs interfaces

โœ Scribed by S. A. Komolov; Yu. G. Aliaev; N. V. Potyupkin; I. S. Buzin


Book ID
110141291
Publisher
Springer
Year
2005
Tongue
English
Weight
61 KB
Volume
50
Category
Article
ISSN
1063-7842

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Electronic structure at an abrupt GaAs-G
๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 172 KB

Classified abstracts 3408-3417 edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like Al for the Au contact. To position the Fermi level closer to a valence-band edge, however, there are no further possibilities among the elemental metals, since A