Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu[sub 2]O Films

✍ Scribed by Mizuno, Kotaro; Izaki, Masanobu; Murase, Kuniaki; Shinagawa, Tsutomu; Chigane, Masaya; Inaba, Minoru; Tasaka, Akimasa; Awakura, Yasuhiro

• Book ID: 118127496
• Publisher: The Electrochemical Society
• Year: 2005
• Tongue: English
• Weight: 120 KB
• Volume: 152
• Category: Article
• ISSN: 0013-4651
• DOI: 10.1149/1.1862478

✦ Synopsis

The p-type semiconductor cuprous oxide ͑Cu 2 O͒ film has been of considerable interest as a component of solar cells and photodiodes due to its bandgap energy of 2.1 eV and high optical absorption coefficient. We prepared Cu 2 O films on a conductive substrate by electrodeposition at 318 K from an aqueous solution containing copper sulfate and lactic acid. The structural and electrical characterizations of the resulting films were examined by X-ray diffraction, X-ray photoelectron spectroscopy, and X-ray absorption measurements, and the Hall effect measurement, respectively. The resistivity varied from 2.7 ϫ 10 4 to 3.3 ϫ 10 6 ⍀ cm, while the carrier density was from 10 12 to 10 14 cm -3 and the mobility from 0.4 to 1.8 cm 2 V -1 s -1 , depending on the preparation conditions, i.e., solution pH and deposition potential. The carrier density was sensitive to the atomic ratio of Cu to O in the films and the mobility to the grain size.