๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Structural and electrical characteristics of n-InSb/p-GaAs heterojunction prepared by liquid phase epitaxy

โœ Scribed by Farag, A.A.M.; Terra, F.S.; Ashery, A.; Mansour, A.M.


Book ID
127296737
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
697 KB
Volume
615
Category
Article
ISSN
0925-8388

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electrical and photoelectrical character
โœ A.A.M. Farag; F.S. Terra; G.M. Mahmoud ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 830 KB

The present work deals with the electrical and optoelectronic characterizations of the isotype GaAs 15 P 85 /GaP devices prepared by liquid phase epitaxy. The electrical properties of the fabricated junction were studied by analyzing its current-voltage (I-V) characteristics, capacitance-voltage (C-