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Structural and electrical analysis of S+ ion bombarded p-InP(1 0 0)

โœ Scribed by Q. Zhao; G.J. Zhai; R.W.M. Kwok


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
718 KB
Volume
253
Category
Article
ISSN
0169-4332

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ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the